Check Ukraine import data of ma 100 under HS code 8541290010. Get import data of Ukraine for HS code 8541290010
Date | HS Code | Product Description | Origin Country | Quantity | Net Weight [KGS] | Total Value [USD] | Importer Name |
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27/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel (40W): art. IRFI740GPBF - 1000pcs. For civil industrial electronics. Manufacturer - Vishay Europe Sales GmbH, trademark - Vishay. . | CHINA | ***** | 2.12 | 315.3047914 | View Importer |
26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF1010NPBF - 30 pcs, Field, drain-source voltage of 55V, drain current 72A.Potuzhnist scattering 130Vt.- IRF3205ZPBF - 40 pcs, Field, drain-source voltage 55V, 75A drain current, power dissipation 170Vt. - IRF530NPBF - 100 pieces; Field; Napruhastik-source: 100V; current drain: 17A; power dissipation: 79Vt. - IRF7341TRPBF- 100 pieces; Field; drain-source voltage of 55 V, current flow: 4,7 A; power: 2W. - IRF7389PBF - 200 pieces; Field; current: 7,3A, Voltage 30V drain-source, power dissipation, 2,5Vt. - IRF7416TRPBF - 100 pieces; Field; Napruhast -30V to-drain, drain current: -10A, Power: 2,5Vt. - IRF8313TRPBF - 50 pieces; Field; vytik30V-voltage drain, drain current: 9,7A; Power: 2W. - IRF9Z24NPBF - 1000 pieces; Field; Power drain-source -55 V drain current: -12 A; Power: 45W. - IRFH5010TR2 - 40 pcs, Field, drain-source voltage of 100 V, the drain current of 13 A; Power: 3.6 watt. - IRLB3813 - 50 pieces, Field, H apruha drain-source 30 V, drain current of 260 A, 230 W power dissipation. -IRLML0030TRPBF - 2500 pcs; Field; Power drain-source: 30V, drain current 5,3A, power dissipation 1,3Vt. - IRLML0060TRPBF - 3000 pcs; Field; Napruhastik-source: 60 V; Current drain: 2,7A, Power dissipation: 1.25 W. -IRLR2905TRPBF - 200 pieces; Field; Power drain-source 16 V; Drain current: 42A, power dissipation of 110 watts. - IRLU024N - 40 pieces; Field; Power flow-vytik60V, 56A drain current. Powerful Number scattering 42Vt. Used inproduction telecommunications equipment, civilian purposes. Not yeustatkuvannyam or protective systems for use in vybuhonebezpechnomuseredovyschi. Do not have a membership transmitters or transmitters and a means pryymachiv.Ne spetspryznachennya.Krayina production - CNTorhovelna mark - International RectifierVyrobnyk - International Rectifier " | CHINA | ***** | 4.177 | 626.0785965 | View Importer |
26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -FDS4935A - 100 pieces; Field; drain-source voltage of -30V, the drain current of 7A. Potuzhnistrozsiyuvannya 2W. Used in the manufacture of telecommunications equipment, civilian purposes. It is not equipment dlyazastosuvannya or protective systems in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - Fairchild SemiconductorVyrobnyk - Fairchild Semiconductor. " | CHINA | ***** | 0.028 | 10.34288591 | View Importer |
26/Apr/2017 | 8541290010 | 1.Tranzystor MOS structure of N-channel I GBT-type applied dlyaperetvo Rennie current in electrical circuits: art.IR G4PC50SPBF (maks.potuzhnist200Vt, eg hectares 600V, current 70A) -100sht.Vyrobnyk: Infenion Technologies.Krayina production: MX.Torhivelna mark: Infenion Technologies. | MEXICO | ***** | 0.72 | 201.7067395 | View Importer |
26/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -TIRF530 - 50 pieces; Field; drain-source voltage: 100V, a drain current 17 A, power dissipation of 79 watts. Vyrobnytstvitelekomunikatsiynoho used in equipment for civil use . It is not abozahysnymy systems equipment for use in potentially explosive environments. mistyatv not composed of transmitters and receivers or transmitters. It is not zasobomspetspryznachennya.Krayina production - PHTorhovelna mark - International RectifierVyrobnyk - International Rectifier. " | PHILIPPINES | ***** | 0.182 | 12.06413438 | View Importer |
25/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -IRF7495PBF - 20 pieces; Field; drain source voltage of 100 V, drain current: 7.3 A; Power: 2.5 watts. Used in production telekomunikatsiynohoobladnannya, civilian purposes. It is no equipment or protective systemamydlya use in potentially explosive environments. do not contain skladiperedavachiv or transmitters and receivers. spetspryznachennya.Krayina not a means of production - MYTorhovelna mark - Infineon (IRF) Manufacturer - Infineon (IRF). " | MALAYSIA | ***** | 0.007 | 9.784170526 | View Importer |
25/Apr/2017 | 8541290010 | 1. Semiconductor devices: art. BSP297H6327XTSA1 transistor field-powerful 1000pcs. For use in elektrotehnytsi.Torhovelna mark - INF.Vyrobnyk - INF. . | CHINA | ***** | 0.52 | 159.0000816 | View Importer |
21/Apr/2017 | 8541290010 | 1.Tranzystory strong field, MOS structure, N-channel, with scattering ability 1.8Vt: art. BSP297H6327XTSA1 - 297sht, powerful field transistors, MOS structure, N-channel, with scattering ability 1.3Vt: art. IRLML6346TRPBF - 100 pieces. For civil industrial electronics. Manufacturers - Infineon Technologies, trademark - Infineon. . | CHINA | ***** | 0.083 | 68.48930067 | View Importer |
20/Apr/2017 | 8541290010 | 1. Semiconductor devices: art. IRLZ44NPBF transistor field-powerful 100 pieces. For use in elektrotehnytsi.Torhovelna mark - INF.Vyrobnyk - INF. . | PHILIPPINES | ***** | 0.085 | 22.89984404 | View Importer |
20/Apr/2017 | 8541290010 | "1. Semiconductor devices: art. IRFP260NPBF Transistor powerful field-.; 100 pieces of art. IRFR3411PBF transistor -150sht strong field. For usein elektrotehnytsi.Torhovelna mark - INF.Vyrobnyk - INF.." | CHINA | ***** | 0.477 | 127.0000219 | View Importer |
18/Apr/2017 | 8541290010 | "1.Tranzytor n-channel, with a maximum power dissipation 450Vt type IGBT N-Channel 100A, 1200V, SOT-227B, art.2674741-1sht, Country of origin - DEVyrobnyk - SEMICONDUCTORTorhovelna mark - SEMICONDUCTOR." | GERMANY | ***** | 0.05 | 22.78676258 | View Importer |
18/Apr/2017 | 8541290010 | "1. Silicon Transistors Field powerful, n-channel, insulated gate: -STP50NE10 - 4 pieces; Field; Voltage: 100V; Current: 50 A, Power: 180 Vt.Vykorystovuyutsya in the production of telecommunications equipment, tsyvilnohopryznachennya. It is not equipment or protective systems for use vvybuhonebezpechnomu environment. Do not have a membership aboperedavachiv transmitters and receivers. spetspryznachennya.Krayina not a means of production - CNTorhovelna mark - STMicroelectronicsVyrobnyk - STMicroelectronics. " | CHINA | ***** | 0.001 | 1.742872554 | View Importer |
14/Apr/2017 | 8541290010 | 1.Napivprovidnykovi devices: SI2343CDS-T1-GE3CT-ND transistor field-powerful 1000shtKrayina production - CNTorhovelna mark - VISHAYVyrobnyk - VISHAY. | CHINA | ***** | 0.5 | 258.4769944 | View Importer |
14/Apr/2017 | 8541290010 | 1.Bipolar transistor with insulated shutter (IGBT) with power of 100W: art.IRG4BC30FD-SPBF - 5 pcs. For civil electrical engineering. The manufacturer is Infineon Technologies, a trademark of Infineon. . | MEXICO | ***** | 0.002 | 8.156949643 | View Importer |
13/Apr/2017 | 8541290010 | 1. Semiconductor devices: art. IRG4PC50WPBF transistor field-powerful 100 pieces. For use in elektrotehnytsi.Torhovelna mark - INF.Vyrobnyk - INF. . | MEXICO | ***** | 0.505 | 134.0000032 | View Importer |
Our market research report and Ukraine export statistics of ma 100 covers market share of Ukrainian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Ukraine. Few shipment records with a small number of important columns from Ukraine export data of sunglass are given above. Other hidden fields such as Ukrainian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Ukraine customs data of sunglass. To view more shipment records of sunglass export data of Ukraine, you can set a filter by Country Name or HS Code on the left side.
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