Check Russia import data of device under HS code 8542326100. Get import data of Russia for HS code 8542326100
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
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09/Nov/2017 | 8542326100 | Electrically erasable programmable read-only memory FLASH device in the form of an integrated circuit, MOD. AT24CM01-SHD-T, MEMORY 1Mbit for the production of electricity meters, ARTICLE AT24CM01-SHD-T - 2000pcs | ATMEL | *** | 2000 | PC | 0.8 | 908,2 | View Importer |
15/Nov/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | MICROCHIP TECHNOLOGY INC. | *** | 300 | PC | 0.163 | 276,41 | View Importer |
15/Nov/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | MICROCHIP TECHNOLOGY INC. | *** | 12 | PC | 0.009 | 3,73 | View Importer |
15/Nov/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | ADESTO TECHNOLOGIES CORPORATION, INC. | *** | 1000 | PC | 0.386 | 5443,11 | View Importer |
15/Nov/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | ADESTO TECHNOLOGIES CORPORATION, INC. | *** | 6000 | PC | 1.998 | 6082,31 | View Importer |
15/Nov/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | ALTERA CORPORATION | *** | 144 | PC | 0.402 | 2096,41 | View Importer |
20/Nov/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | ADESTO TECHNOLOGIES CORPORATION, INC. | *** | 6000 | PC | 1.926 | 4832,45 | View Importer |
24/Nov/2017 | 8542326100 | Electronic integrated circuits - DEVICES REMEMBERING STANDING electrically erasable M24M01-RMN6TP | ST | *** | 1000 | PC | 2.7 | 1321,01 | View Importer |
11/Nov/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): | AMD | *** | 7 | PC | 0.02 | 16,23 | View Importer |
24/Nov/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) | ALTERA CORPORATION | *** | 98 | PC | 1.016 | 2475,74 | View Importer |
20/Nov/2017 | 8542326100 | Electronic integrated circuits, electrically erasable programmable FLASH STORAGE DEVICE ES PROM, with a storage capacity to 512MBIT: | ISSI | *** | 3 | PC | 0.036 | 14,46 | View Importer |
20/Nov/2017 | 8542326100 | Electronic integrated circuits, electrically erasable programmable FLASH STORAGE DEVICE ES PROM, with a storage capacity to 512MBIT: | MICROCHIP | *** | 3 | PC | 0.036 | 14,46 | View Importer |
25/Nov/2017 | 8542326100 | MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: | ANALOG DEVICES | *** | 20 | PC | 0.01 | 15,91 | View Importer |
01/Nov/2017 | 8542326100 | Electrically erasable rewritable PERMANENT STORAGE DEVICE In an integrated circuit VOLTAGE 3.6 V Operating temperature 0 to + 70 4MB | WITHOUT TK | *** | 10 | PC | 0.01 | 15,6 | View Importer |
02/Nov/2017 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 32 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 100 | PC | 0.18 | 272,55 | View Importer |
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