Russia Import Data of Device under HS Code 8542326100

Check Russia import data of device under HS code 8542326100. Get import data of Russia for HS code 8542326100

8542326100  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
09/Nov/2017 8542326100 Electrically erasable programmable read-only memory FLASH device in the form of an integrated circuit, MOD. AT24CM01-SHD-T, MEMORY 1Mbit for the production of electricity meters, ARTICLE AT24CM01-SHD-T - 2000pcs ATMEL *** 2000 PC 0.8 908,2 View Importer
15/Nov/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): MICROCHIP TECHNOLOGY INC. *** 300 PC 0.163 276,41 View Importer
15/Nov/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): MICROCHIP TECHNOLOGY INC. *** 12 PC 0.009 3,73 View Importer
15/Nov/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): ADESTO TECHNOLOGIES CORPORATION, INC. *** 1000 PC 0.386 5443,11 View Importer
15/Nov/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): ADESTO TECHNOLOGIES CORPORATION, INC. *** 6000 PC 1.998 6082,31 View Importer
15/Nov/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): ALTERA CORPORATION *** 144 PC 0.402 2096,41 View Importer
20/Nov/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): ADESTO TECHNOLOGIES CORPORATION, INC. *** 6000 PC 1.926 4832,45 View Importer
24/Nov/2017 8542326100 Electronic integrated circuits - DEVICES REMEMBERING STANDING electrically erasable M24M01-RMN6TP ST *** 1000 PC 2.7 1321,01 View Importer
11/Nov/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC OPERATIONAL memorizing DEVICE NOT SCRAP AND elect Electrotechnical nodes, not for secretly obtaining and recording, without the module TPM.....): AMD *** 7 PC 0.02 16,23 View Importer
24/Nov/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) ALTERA CORPORATION *** 98 PC 1.016 2475,74 View Importer
20/Nov/2017 8542326100 Electronic integrated circuits, electrically erasable programmable FLASH STORAGE DEVICE ES PROM, with a storage capacity to 512MBIT: ISSI *** 3 PC 0.036 14,46 View Importer
20/Nov/2017 8542326100 Electronic integrated circuits, electrically erasable programmable FLASH STORAGE DEVICE ES PROM, with a storage capacity to 512MBIT: MICROCHIP *** 3 PC 0.036 14,46 View Importer
25/Nov/2017 8542326100 MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: ANALOG DEVICES *** 20 PC 0.01 15,91 View Importer
01/Nov/2017 8542326100 Electrically erasable rewritable PERMANENT STORAGE DEVICE In an integrated circuit VOLTAGE 3.6 V Operating temperature 0 to + 70 4MB WITHOUT TK *** 10 PC 0.01 15,6 View Importer
02/Nov/2017 8542326100 MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 32 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC) WITHOUT A TRADEMARK *** 100 PC 0.18 272,55 View Importer

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Our market research report and Russia export statistics of device covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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