Russia Device Imports under HS Code 8542326100 from China

Lookup Russia device imports under HS code 8542326100 from China. Search device import data under HS code 8542326100 from China.

8542326100   China  
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
01/Sep/2017 8542326100 MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): XILINX INC XILINX B / N XCF04SVO20C B / 24 H *** CHINA *** *** **** 193,49 View Importer
01/Sep/2017 8542326100 MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity 8Mbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TRADEMARK B / N S29AL008J70TF *** CHINA 0,01 *** 0.01 39,07 View Importer
07/Sep/2017 8542326100 MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 16 MBIT. (Operating temperature range: -40 ... + 85 ° C). (NO ELECTRICAL SCRAP): MACRONIX INTERNATIONAL CO, LTD.. WITHOUT A TRADEMARK MXIC MX29LV *** CHINA 0,94 KG 0.94 380,17 View Importer
05/Sep/2017 8542326100 MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE TYPE FLASH EEPROM MEMORY WITH VOLUME LESS THAN 512 MBIT. (NOT SCRAP ELECTRIC) with a storage capacity of 16 MBIT. (Operating temperature range: -40 ... + 85 ° C) ADESTO TECHNOLOGIES without commodity *** CHINA 0,01 KG 0.01 8,9 View Importer
14/Sep/2017 8542326100 MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 128 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): CYPRESS SEMICONDUCTOR WITHOUT A TRADEMARK CYPRESS S25FL128SAGBHI200 B *** CHINA 0,24 KG 0.24 258,22 View Importer
01/Sep/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits *** CHINA 0,74 *** 0.74 2362,6 View Importer
01/Sep/2017 8542326100 The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits *** CHINA 0,44 *** 0.44 187,39 View Importer
02/Sep/2017 8542326100 Electrically erasable rewritable read-only memory FLASH device in the form of an integrated circuit, memory 0.064MBIT,: FOR DIGITAL TELEVISION consoles. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND NOT dual-use *** CHINA 1,5 *** 1.5 1410 View Importer
13/Sep/2017 8542326100 Electrically erasable rewritable read-only memory FLASH device in the form of an integrated circuit, memory, 1Mbit,: FOR ELECTRICITY METERS. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND DO NOT DOUBLE PURPOSE; *** CHINA 18 KG 18 13050 View Importer
13/Sep/2017 8542326100 Electrically erasable programmable read-only memory FLASH device in the form of an integrated circuit, memory, 1Mbit,: FOR ELECTRICITY METERS. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND NOT dual-use *** CHINA 13,6 KG 13.6 15439,4 View Importer
13/Sep/2017 8542326100 Electrically erasable programmable read-only memory flash memory devices in an integrated circuit, memory capacity of 16 kilobits FOR METERS, ELECTRICITY, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND DO NOT DOUBLE DESTINATION *** CHINA 0,35 KG 0.35 217 View Importer
13/Sep/2017 8542326100 Electrically erasable programmable read-only memory FLASH device in the form of an integrated circuit, memory, 1Mbit,: FOR ELECTRICITY METERS. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND NOT dual-use *** CHINA 5 KG 5 3016 View Importer
06/Sep/2017 8542326100 The memory chips are monolithic integrated electrically erasable programmable, CMOS chip MEMORY 64 Kbps, voltage 1,7-5,5 no guest encryption (cryptographic) means, there is no special technical devices for secret software *** CHINA 7 KG 7 3120 View Importer
22/Sep/2017 8542326100 MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) with a storage capacity of 16 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): ALTERA CORPORATION ALTERA B / N EPCQ16SI8N B / N *** CHINA 0,03 KG 0.03 294 View Importer
22/Sep/2017 8542326100 MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity 8Mbps. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): SPANSION INC. WITHOUT TRADEMARK B / N S29AL008J55TFIR10 B / 3 H *** CHINA *** KG **** 6,11 View Importer

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Our market research report and Russia export statistics of device covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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