Lookup Russia device imports under HS code 8542326100 from China. Search device import data under HS code 8542326100 from China.
Date | HS Code | Product Description | Trademark | Origin Country | Quantity | Unit | Net Weight [KGS] | Total Value [USD] | Importer Name |
---|---|---|---|---|---|---|---|---|---|
01/Sep/2017 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): XILINX INC XILINX B / N XCF04SVO20C B / 24 H | *** | CHINA | *** | *** | **** | 193,49 | View Importer |
01/Sep/2017 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity 8Mbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR CORPORATION WITHOUT TRADEMARK B / N S29AL008J70TF | *** | CHINA | 0,01 | *** | 0.01 | 39,07 | View Importer |
07/Sep/2017 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - TYPE STORAGE DEVICE WITH FLASH EEPROM MEMORY CAPACITY 16 MBIT. (Operating temperature range: -40 ... + 85 ° C). (NO ELECTRICAL SCRAP): MACRONIX INTERNATIONAL CO, LTD.. WITHOUT A TRADEMARK MXIC MX29LV | *** | CHINA | 0,94 | KG | 0.94 | 380,17 | View Importer |
05/Sep/2017 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - STORAGE DEVICE TYPE FLASH EEPROM MEMORY WITH VOLUME LESS THAN 512 MBIT. (NOT SCRAP ELECTRIC) with a storage capacity of 16 MBIT. (Operating temperature range: -40 ... + 85 ° C) ADESTO TECHNOLOGIES without commodity | *** | CHINA | 0,01 | KG | 0.01 | 8,9 | View Importer |
14/Sep/2017 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 128 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): CYPRESS SEMICONDUCTOR WITHOUT A TRADEMARK CYPRESS S25FL128SAGBHI200 B | *** | CHINA | 0,24 | KG | 0.24 | 258,22 | View Importer |
01/Sep/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0,74 | *** | 0.74 | 2362,6 | View Importer |
01/Sep/2017 | 8542326100 | The storage device FLASH EEPROM memory capacity up to 512 Mbit (NOT stack DYNAMIC. OPERATIONAL memorizing. DEVICE NOT SCRAP elect. And Electrot. Nodes, not for secret and registration. INFORMATION, without the module TPM) Electronic integrated circuits | *** | CHINA | 0,44 | *** | 0.44 | 187,39 | View Importer |
02/Sep/2017 | 8542326100 | Electrically erasable rewritable read-only memory FLASH device in the form of an integrated circuit, memory 0.064MBIT,: FOR DIGITAL TELEVISION consoles. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND NOT dual-use | *** | CHINA | 1,5 | *** | 1.5 | 1410 | View Importer |
13/Sep/2017 | 8542326100 | Electrically erasable rewritable read-only memory FLASH device in the form of an integrated circuit, memory, 1Mbit,: FOR ELECTRICITY METERS. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND DO NOT DOUBLE PURPOSE; | *** | CHINA | 18 | KG | 18 | 13050 | View Importer |
13/Sep/2017 | 8542326100 | Electrically erasable programmable read-only memory FLASH device in the form of an integrated circuit, memory, 1Mbit,: FOR ELECTRICITY METERS. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND NOT dual-use | *** | CHINA | 13,6 | KG | 13.6 | 15439,4 | View Importer |
13/Sep/2017 | 8542326100 | Electrically erasable programmable read-only memory flash memory devices in an integrated circuit, memory capacity of 16 kilobits FOR METERS, ELECTRICITY, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND DO NOT DOUBLE DESTINATION | *** | CHINA | 0,35 | KG | 0.35 | 217 | View Importer |
13/Sep/2017 | 8542326100 | Electrically erasable programmable read-only memory FLASH device in the form of an integrated circuit, memory, 1Mbit,: FOR ELECTRICITY METERS. / NOT SCRAP ELECTRIC, DO NOT WASTE; NOT WAR AND NOT dual-use | *** | CHINA | 5 | KG | 5 | 3016 | View Importer |
06/Sep/2017 | 8542326100 | The memory chips are monolithic integrated electrically erasable programmable, CMOS chip MEMORY 64 Kbps, voltage 1,7-5,5 no guest encryption (cryptographic) means, there is no special technical devices for secret software | *** | CHINA | 7 | KG | 7 | 3120 | View Importer |
22/Sep/2017 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) with a storage capacity of 16 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): ALTERA CORPORATION ALTERA B / N EPCQ16SI8N B / N | *** | CHINA | 0,03 | KG | 0.03 | 294 | View Importer |
22/Sep/2017 | 8542326100 | MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity 8Mbps. (Operating temperature range: -40 ... + 85 ° C) (NOT SCRAP ELECTRIC): SPANSION INC. WITHOUT TRADEMARK B / N S29AL008J55TFIR10 B / 3 H | *** | CHINA | *** | KG | **** | 6,11 | View Importer |
Our market research report and Russia export statistics of device covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.
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