Russia G R Imports under HS Code 8542326900 from Taiwan China

Lookup Russia g r imports under HS code 8542326900 from Taiwan China. Search g r import data under HS code 8542326900 from Taiwan China.

8542326900   Taiwan China  
STAT DECLARATION NO CUSTOMS CODE BROKER OR DECLARANT NUMBER DIRECTION DIRECTION EN CUSTOMS MODE SENDER ID SENDER EXPORTER NAME SENDING COUNTRY CODE SENDING COUNTRY SENDER ADDRESS SENDER ADDRESS EN OKTAT SENDER TOTAL ITEMS NUMBER OF PLACES RECIPIENT INN RECIPIENT RECIPIENT COUNTRY CODE RECIPIENT COUNTRY DESTINATION ADDRESS DESTINATION ADDRESS EN RECEIVER OKATO TIN FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT RESPONSIBLE FOR FINANCIAL SETTLEMENT EN RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT RESPONDER ADDRESS FOR FINANCIAL SETTLEMENT EN OKATO RESPONSIBLE FOR FINANCIAL SETTLEMENT TRADING COUNTRY CODE TRADING COUNTRY TOTAL CUSTOMS VALUE CUSTOMS VALUE CURRENCY CODE TIN OF THE DECLARANT NAME OF THE DECLARANT NAME OF THE DECLARANT EN ADDRESS OF THE DECLARANT ADDRESS OF THE DECLARANT EN OKPO DECLARANT COUNTRY OF DEPARTURE COUNTRY OF DEPARTURE EN COUNTRY CODE OF DEPARTURE COUNTRY CODE OF DESTINATION COUNTRY OF DESTINATION COUNTRY DESTINATION INDICATION OF CONTAINER TRAFFIC DELIVERY CONDITION CODE GOODS DELIVERY POINT PLACE CONTRACT CURRENCY CODE TOTAL AMOUNT ON THE ACCOUNT EXCHANGE RATE TRANSPORT AT THE BORDER CODE TRANSPORT AT THE BORDER PRODUCT DESCRIPTION AND SPECIFICATIONS MANUFACTURER COMPANY MANUFACTURER COMPANY EN PRODUCT PLACES QUANTITY ADDITIONAL UNIT COUNTRY OF ORIGIN CODE GROSS WEIGHT KG PREFERENCES PREFERENCES EN QUOTA INVOICE VALUE SYMPTOM CCC METHOD FOR DETERMINING THE VEHICLE CUSTOMS COST RELEASE DATE OF CARGO PAYMENT AMOUNT USD PAYMENT AMOUNT RUB
Date HS Code Product Description Trademark Origin Country Quantity Unit Net Weight [KGS] Total Value [USD] Importer Name
12/Nov/2017 8542326900 Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT MICRON TAIWAN CHINA 2880 PC 7.29 79598,27 View Importer
27/Nov/2017 8542326900 Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT MICRON TAIWAN CHINA 3840 PC 8.2 105927,68 View Importer
21/Nov/2017 8542326900 Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL MICRON TAIWAN CHINA 35000 PC 46.55 32200 View Importer
24/Nov/2017 8542326900 Electronic integrated circuits - in flash memory "NAND" "MT29F1G08ABAEAWP: E TR" with a storage capacity of 1 GB, supply voltage 3.3 V, designed for universal use in microelectronics. Operating temperature range of 0 to +70 degrees GOAL MICRON TAIWAN CHINA 19000 PC 25.27 17480 View Importer
08/Sep/2017 8542326900 MICROCHIP electronic integrated solid - STORAGE DEVICE FLASH EEPROM memory with a storage capacity of 16 Gbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICRON TECHNOLOGY WITHOUT TRADEMARK MICRON MT29F16G08AJADAWP-IT: D B / *** TAIWAN CHINA 0,12 KG 0.12 689,99 View Importer
07/Sep/2017 8542326900 MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 8 GB is approved for use in telecommunications equipment. Supply voltage *** TAIWAN CHINA 0,01 KG 0.01 5 View Importer
14/Sep/2017 8542326900 MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 1 GB is approved for use in telecommunications equipment. Supply voltage *** TAIWAN CHINA *** KG **** 135 View Importer
14/Sep/2017 8542326900 MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents the FLASH memory of 16 GB is approved for use in telecommunications equipment. supply voltage *** TAIWAN CHINA 0,01 KG 0.01 5,5 View Importer
26/Sep/2017 8542326900 ES FLASH EPROM (NAND FLASH) - CRYSTAL SILICON SEMICONDUCTOR MEMORY CAPACITY 128 Gbps, 2.7-3.6 V, the packaged used in the manufacture of chips for digital satellite receivers, ARE NOT FLASH EPROM ES (NAND FLASH) CROWBAR elect *** TAIWAN CHINA 4,1 KG 4.1 15416,34 View Importer
29/Sep/2017 8542326900 Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 3.6 V Operating temperature from - 40 to + 85 4GB: MICRON WITHOUT TK B / M MT29F4G01ADAGDWB-IT: G B / M 2 *** TAIWAN CHINA *** KG **** 20,76 View Importer
30/Sep/2017 8542326900 MICROCHIP electronic integrated monolithic, not creating disturbing electromagnetic field: Integrated circuits, monolithic, represents a FLASH memory capacity of 16 GB is approved for use in telecommunications equipment. supply voltage *** TAIWAN CHINA 0,02 KG 0.02 31,5 View Importer
20/Sep/2017 8542326900 Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) F59L1G81MA-25TIG2Y, VOLUME 1 Gbit, 48-pin input voltage 2.7-3.6V, SIZE 20 * 12 * 1.2mm FOR PROM.SBORKI TV MODEL 1107 -002459 *** TAIWAN CHINA 41 KG 41 18449,09 View Importer

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Our market research report and Russia export statistics of g r covers market share of Russian companies and market price of sunglass. This helps you to do market analysis on the basis of price, company, etc. perfectly and study market size of sunglass in Russia. Few shipment records with a small number of important columns from Russia export data of sunglass are given above. Other hidden fields such as Russian Exporter Name with Address, Foreign er Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of sunglass. To view more shipment records of sunglass export data of Russia, you can set a filter by Country Name or HS Code on the left side.

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